Electron and hole drift velocity in chemical vapor deposition diamond
2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 109, no 6, 063719- p.Article in journal (Refereed) Published
The time-of-flight technique has been used to measure the drift velocities for electrons and holes in high-purity single-crystalline CVD diamond. Measurements were made in the temperature interval 83 ≤ T ≤ 460 K and for electric fields between 90 and 4 × 103 V/cm, applied in the <100> crystallographic direction. The study includes low-field drift mobilities and is performed in the low-injection regime to perturb the applied electric field only minimally.
Place, publisher, year, edition, pages
2011. Vol. 109, no 6, 063719- p.
velocity, time-of-flight, carrier drift mobility, single crystal diamond
Condensed Matter Physics Engineering and Technology
Research subject Physics with spec. in Atomic, Molecular and Condensed Matter Physics; Engineering Science with specialization in Science of Electricity
IdentifiersURN: urn:nbn:se:uu:diva-122792DOI: 10.1063/1.3554721ISI: 000289149900072OAI: oai:DiVA.org:uu-122792DiVA: diva2:311066
FunderSwedish Research Council