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Hydrogen-induced 3×1 phase of the Si-rich 3C-SiC(001) surface
Department of Applied Chemistry, University of Tokyo, Japan.
Department of Chemistry, University of Tokyo, Japan.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Electrotechnical Laboratory, Tsukuba, Japan.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 4, R2417-R2420 p.Article in journal (Refereed) Published
Abstract [en]

A single-domain 3×1 phase induced by hydrogen adsorption on a Si-rich 3C-SiC(001)3×2 surface is investigated by photoemission using synchrotron radiation. Three surface components of the Si 2p core level are identified for the 3×1-H phase, which resemble those of the 3×2 surface. A H-Si bonding state is observed by angle-resolved valence-band photoemission. These results are consistent with the recent assignments of the Si 2p surface components and the valence band spectra of the 3×2 surface, based on the 3×2 structure model with 2/3 ML Si addimers. A straightforward 3×1-H structure model is introduced featuring Si dimer-bond breaking and dangling-bond saturation.

Place, publisher, year, edition, pages
2000. Vol. 61, no 4, R2417-R2420 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-49847DOI: 10.1103/PhysRevB.61.R2417ISI: 000085348300008OAI: oai:DiVA.org:liu-49847DiVA: diva2:270743
Available from: 2013-03-27 Created: 2009-10-11 Last updated: 2017-12-12Bibliographically approved

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