Electronic structure of Sn/Si(111) √3×√3: Indications of a low-temperature phase
2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 12, 8082-8086 p.Article in journal (Refereed) Published
The Sn/Si(111) √3×√3 surface has been studied by photoelectron spectroscopy, low-energy electron diffraction (LEED), and scanning tunneling microscopy. Unlike Sn/Ge(111), the Sn/Si(111) surface shows a √3×√3 LEED pattern at low temperature also (70 K). The electronic structure, however, is inconsistent with a pure √3×√3 phase. Sn 4d spectra exhibit two major components and the valence band shows two surface bands. These features have been associated with the low-temperature 3×3 phase in the case of Sn/Ge(111). The similarity in the electronic structure points to stabilization of a low-temperature phase for Sn/Si(111) also, but at a significantly lower temperature (<70 K).
Place, publisher, year, edition, pages
2000. Vol. 62, no 12, 8082-8086 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47583DOI: 10.1103/PhysRevB.62.8082ISI: 000089593400060OAI: oai:DiVA.org:liu-47583DiVA: diva2:268479