Reactively sputtered ZrN for application as reflecting back contact in Cu(In,Ga)Se-2 solar cells
2009 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 18, 5548-5552 p.Article in journal (Refereed) Published
We investigate reactively sputtered films of zirconium nitride, ZrN, for use as highly reflecting back contacts in Cu(In,Ga)Se2 (CIGS) devices with sub-micrometer absorbers. We identify the nitrogen flow and the sputter current as the decisive parameters for the composition, and demonstrate a method for determining the nitrogen flow at which the transition from metallic to compound sputtering mode occurs for a given current. Films prepared at this working point consist of stoichiometric ZrN with a low resistivity, a high reflectance for red and infrared light, and have a fairly high sputter rate. Calculations show that the reflectance at the ZrN/CIGS interface is significantly superior to that at the standard Mo/CIGS interface.
Place, publisher, year, edition, pages
Elsevier , 2009. Vol. 517, no 18, 5548-5552 p.
ZrN, Reactive DC magnetron sputtering, Optical properties, CIGS
Engineering and Technology
Research subject Materials Science
IdentifiersURN: urn:nbn:se:uu:diva-102584DOI: 10.1016/j.tsf.2009.03.196ISI: 000267182700028OAI: oai:DiVA.org:uu-102584DiVA: diva2:216458
Correction in: Thin Solid Films, 2010, vol. 518, issue 10, p. 2924, doi: 10.1016/j.tsf.2009.06.023 2011-11-232009-05-082011-12-02Bibliographically approved