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Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
2004 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O3 by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates.

Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water.

For growth of copper(I) nitride from Cu(hfac)2 and ammonia no film growth occurred without adding water to the growth process. The Cu3N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H2 the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NHx groups was often found to play an important role, according to both theoretical calculations and experimental results.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis , 2004. , p. 57
Series
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 1035
Keywords [en]
Inorganic chemistry, Atomic Layer Deposition, ALD, copper, copper(I) oxide, copper(I) nitride, deposition pathway, CuCl, Cu(hfac)2, oxide substrates, epitaxy, DFT, ab-initio
Keywords [sv]
Oorganisk kemi
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-4651ISBN: 91-554-6081-X (print)OAI: oai:DiVA.org:uu-4651DiVA, id: diva2:165381
Public defence
2004-11-26, Häggsalen, The Ångström Laboratory, Lägerhyddsvägen 1, Uppsala, 10:15
Opponent
Supervisors
Available from: 2004-11-04 Created: 2004-11-04Bibliographically approved
List of papers
1. Atomic layer deposition of copper(I) oxide from copper(I) chloride and water
Open this publication in new window or tab >>Atomic layer deposition of copper(I) oxide from copper(I) chloride and water
Manuscript (Other academic)
Identifiers
urn:nbn:se:uu:diva-92336 (URN)
Available from: 2004-11-04 Created: 2004-11-04 Last updated: 2010-01-13Bibliographically approved
2. Growth of Copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors
Open this publication in new window or tab >>Growth of Copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors
2004 In: Thin Solid Films, Vol. 458, p. 129-136Article in journal (Refereed) Published
Identifiers
urn:nbn:se:uu:diva-92337 (URN)
Available from: 2004-11-04 Created: 2004-11-04Bibliographically approved
3. Epitaxy of copper on α-Al2O3(001) by atomic layer deposition
Open this publication in new window or tab >>Epitaxy of copper on α-Al2O3(001) by atomic layer deposition
Manuscript (Other academic)
Identifiers
urn:nbn:se:uu:diva-92338 (URN)
Available from: 2004-11-04 Created: 2004-11-04 Last updated: 2010-11-02Bibliographically approved
4. Growth of copper(I) nitride by atomic layer deposition using copper(II) hexafluoroacetylacetonate, water and ammonia as precursors
Open this publication in new window or tab >>Growth of copper(I) nitride by atomic layer deposition using copper(II) hexafluoroacetylacetonate, water and ammonia as precursors
Manuscript (Other academic)
Identifiers
urn:nbn:se:uu:diva-92339 (URN)
Available from: 2004-11-04 Created: 2004-11-04 Last updated: 2010-01-13Bibliographically approved
5. Formation of metallic copper by annealing of atomic layer deposition grown copper(I) nitride thin films
Open this publication in new window or tab >>Formation of metallic copper by annealing of atomic layer deposition grown copper(I) nitride thin films
Manuscript (Other academic)
Identifiers
urn:nbn:se:uu:diva-92340 (URN)
Available from: 2004-11-04 Created: 2004-11-04 Last updated: 2010-01-13Bibliographically approved
6. A theoretical study of copper(I) chloride adsorption on the (111) and (110) surfaces of copper(I) oxide
Open this publication in new window or tab >>A theoretical study of copper(I) chloride adsorption on the (111) and (110) surfaces of copper(I) oxide
Manuscript (Other academic)
Identifiers
urn:nbn:se:uu:diva-92341 (URN)
Available from: 2004-11-04 Created: 2004-11-04 Last updated: 2010-01-13Bibliographically approved

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Citation style
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