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Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2004 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silicon CMP process. CMP is used to planarize oxide interlevel dielectric and to remove excessive tungsten after plug filling in the Al interconnection technology. In Cu interconnection technology, the plugs and wiring are filled in one step and excessive Cu is removed by CMP. In front end processing, CMP is used to realize shallow trench isolation (STI), to planarize trench capacitors in dynamic random access memories (DRAM) and in novel gate concepts.

This thesis is focused on CMP for front end processing, which is the processing on the device level and the starting material. The effects of dopants, crystal orientation and process parameters on silicon removal rate are investigated. CMP and silicon wafer bonding is investigated. Also, plasma assisted wafer bonding to form InP MOS structures is investigated.

A complexity of using STI in bipolar and BiCMOS processes is the integration of STI with deep trench isolation (DTI). A process module to realize STI/DTI, which introduces a poly CMP step to planarize the deep trench filling, is presented.

Another investigated front end application is to remove the overgrowth in selectively epitaxially grown collector for a SiGe heterojunction bipolar transistor.

CMP is also investigated for rounding, which could be beneficial for stress reduction or to create microoptical devices, using a pad softer than pads used for planarization.

An issue in CMP for planarization is glazing of the pad, which results in a decrease in removal rate. To retain a stable removal rate, the pad needs to be conditioned. This thesis introduces a geometrically defined abrasive surface for pad conditioning.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis , 2004. , p. 65
Series
Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1104-232X ; 991
Keyword [en]
Electronics, chemical mechanical polishing, chemical mechanical planarization, silicon, silicon dioxide, front end, shallow trench isolation, deep trench isolation, bipolar transistor, BiCMOS, wafer bonding
Keyword [sv]
Elektronik
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-4304ISBN: 91-554-5995-1 (print)OAI: oai:DiVA.org:uu-4304DiVA, id: diva2:164806
Public defence
2004-06-04, Room 2001, Ångströmlaboratoriet, Lägerhyddsvägen 1, Uppsala, 09:30 (English)
Opponent
Supervisors
Available from: 2004-05-14 Created: 2004-05-14 Last updated: 2010-03-05Bibliographically approved
List of papers
1. Effect of dopants on chemical mechanical polishing of silicon
Open this publication in new window or tab >>Effect of dopants on chemical mechanical polishing of silicon
2002 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 60, no 1-2, p. 149-155Article in journal (Refereed) Published
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-91916 (URN)
Available from: 2004-05-14 Created: 2004-05-14 Last updated: 2012-09-26
2. Effect of diffused boron and phosphorus in Si(100) on chemical mechanical polishing removal rate
Open this publication in new window or tab >>Effect of diffused boron and phosphorus in Si(100) on chemical mechanical polishing removal rate
In: Semiconductor science and technology, ISSN 0268-1242Article in journal (Refereed) Submitted
Identifiers
urn:nbn:se:uu:diva-91917 (URN)
Available from: 2004-05-14 Created: 2004-05-14Bibliographically approved
3. Effect of process parameters on material removal rate in chemical mechanical polishing of Si(100)
Open this publication in new window or tab >>Effect of process parameters on material removal rate in chemical mechanical polishing of Si(100)
Manuscript (Other academic)
Identifiers
urn:nbn:se:uu:diva-91918 (URN)
Available from: 2004-05-14 Created: 2004-05-14 Last updated: 2010-01-13Bibliographically approved
4. Silicon surfaces for hydrophobic wafer bonding
Open this publication in new window or tab >>Silicon surfaces for hydrophobic wafer bonding
1997 In: Semiconductor wafer bonding: science, technology, and applications IV: Proceedings Volume 97-36, The Electrochemical Society, 1997, p. 87-94Chapter in book (Other academic) Published
Identifiers
urn:nbn:se:uu:diva-91919 (URN)1-56677-189-7 (ISBN)
Available from: 2004-05-14 Created: 2004-05-14Bibliographically approved
5. InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding
Open this publication in new window or tab >>InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding
2003 In: Journal of Electronic Materials, ISSN 0361-5235, Vol. 32, no 3, p. 111-116Article in journal (Refereed) Published
Identifiers
urn:nbn:se:uu:diva-91920 (URN)
Available from: 2004-05-14 Created: 2004-05-14Bibliographically approved
6. Chemical mechanical polishing for surface smoothing
Open this publication in new window or tab >>Chemical mechanical polishing for surface smoothing
2002 (English)In: Physica Scripta, ISSN 0031-8949, Vol. T101, p. 200-202Article in journal (Refereed) Published
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-91921 (URN)
Available from: 2004-05-14 Created: 2004-05-14 Last updated: 2012-09-26
7. A shallow and deep trench isolation process module for RF BiCMOS
Open this publication in new window or tab >>A shallow and deep trench isolation process module for RF BiCMOS
In: Journal of the Electrochemical Society, ISSN 0013-4651Article in journal (Refereed) Submitted
Identifiers
urn:nbn:se:uu:diva-91922 (URN)
Available from: 2004-05-14 Created: 2004-05-14Bibliographically approved
8. A base-collector architecture for SiGe HBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing
Open this publication in new window or tab >>A base-collector architecture for SiGe HBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing
Show others...
2002 In: Physica Scripta, ISSN 0031-8949, Vol. T101, p. 64-66Article in journal (Refereed) Published
Identifiers
urn:nbn:se:uu:diva-91923 (URN)
Available from: 2004-05-14 Created: 2004-05-14Bibliographically approved
9. Geometrically defined all-diamond abrasive surface for pad conditioning in chemical mechanical polishing
Open this publication in new window or tab >>Geometrically defined all-diamond abrasive surface for pad conditioning in chemical mechanical polishing
In: Journal of the Electrochemical Society, ISSN 0013-4651Article in journal (Refereed) Submitted
Identifiers
urn:nbn:se:uu:diva-91924 (URN)
Available from: 2004-05-14 Created: 2004-05-14Bibliographically approved

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