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Study of silicon nitride inner spacer formation in process of gate-all-around nano-transistors
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2020 (English)In: Nanomaterials, ISSN 2079-4991, Vol. 10, no 4, article id 793Article in journal (Refereed) Published
Abstract [en]

Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device dimensions. The preparation of inner spacers is one of the most critical processes for GAA nano-scale transistors. This study focuses on two key processes: Inner spacer film conformal deposition and accurate etching. The results show that low pressure chemical vapor deposition (LPCVD) silicon nitride has a good film filling effect; a precise and controllable silicon nitride inner spacer structure is prepared by using an inductively coupled plasma (ICP) tool and a new gas mixtures of CH2F2/CH4/O2/Ar. Silicon nitride inner spacer etch has a high etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO2. High anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is successfully demonstrated. It also provides a solution to the key process challenges of nano-transistors beyond 5 nm node. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.

Place, publisher, year, edition, pages
2020. Vol. 10, no 4, article id 793
Keywords [en]
Field effect transistor, Gate-all-around (GAA), High anisotropy, High etch selectivity, Inner spacer, Nanosheet, Nanostructure manufacture, Nanowire
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:miun:diva-39020DOI: 10.3390/nano10040793Scopus ID: 2-s2.0-85083962188OAI: oai:DiVA.org:miun-39020DiVA, id: diva2:1429944
Available from: 2020-05-13 Created: 2020-05-13 Last updated: 2020-05-13

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Radamson, Henry H.
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Department of Electronics Design
Condensed Matter Physics

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