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Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
SweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-5036-2833
Inst Elect Microelect and Nanotechnol, France.
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2019 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 115, no 22, article id 221601Article in journal (Refereed) Published
Abstract [en]

Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN nucleation layers (NLs) grown by metalorganic chemical vapor deposition on SiC (0001) substrates mediated by an interface extending over two atomic layers L1 and L2 with composition (Al1/3Si2/3)(2/3)N and (Al2/3Si1/3)N, respectively. It is remarkable that the interfaces have ordered vacancies on one-third of the Al/Si position in L1, as shown here by analytical scanning transmission electron microscopy and ab initio calculations. This unique interface is coined the out-of-plane compositional-gradient with in-plane vacancy-ordering and can perfectly transform the in-plane lattice atomic configuration from the SiC substrate to the AlN NL within 1 nm thick transition. This transmorphic epitaxial scheme enables a critical breakdown field of similar to 2 MV/cm achieved in thin GaN-based transistor heterostructures grown on top. Lateral breakdown voltages of 900 V and 1800 V are demonstrated at contact distances of 5 and 20 mu m, respectively, and the vertical breakdown voltage is amp;gt;= 3 kV. These results suggest that the transmorphic epitaxially grown AlN layer on SiC may become the next paradigm for GaN power electronics. (C) 2019 Author(s).

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2019. Vol. 115, no 22, article id 221601
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-163045DOI: 10.1063/1.5123374ISI: 000504304100005OAI: oai:DiVA.org:liu-163045DiVA, id: diva2:1384251
Note

Funding Agencies|Knut and Alice Wallenberg Foundation Scholar Grant [KAW-2016-0358]; European UnionEuropean Union (EU) [823260]; KAW foundation; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [EM16-0004]

Available from: 2020-01-09 Created: 2020-01-09 Last updated: 2020-02-06

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