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Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada;Univ British Columbia, Quantum Matter Inst, Vancouver, BC V6T 1Z4, Canada.
Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada;Univ British Columbia, Quantum Matter Inst, Vancouver, BC V6T 1Z4, Canada.
Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada;Univ British Columbia, Quantum Matter Inst, Vancouver, BC V6T 1Z4, Canada.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and Condensed Matter Physics. Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada;Univ British Columbia, Quantum Matter Inst, Vancouver, BC V6T 1Z4, Canada;.
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2019 (English)In: Science Advances, E-ISSN 2375-2548, Vol. 5, no 11, article id eaaw5593Article in journal (Refereed) Published
Abstract [en]

Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.

Place, publisher, year, edition, pages
AMER ASSOC ADVANCEMENT SCIENCE , 2019. Vol. 5, no 11, article id eaaw5593
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Condensed Matter Physics
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URN: urn:nbn:se:uu:diva-400048DOI: 10.1126/sciadv.aaw5593ISI: 000499736100018PubMedID: 31723598OAI: oai:DiVA.org:uu-400048DiVA, id: diva2:1380097
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Swedish Research Council, 2016-06719Available from: 2019-12-18 Created: 2019-12-18 Last updated: 2019-12-18Bibliographically approved

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