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A Very High Isolation (>50 dB) and Low Insertion Loss (<0.55 dB) 140-220 GHz MEMSWaveguide Switch
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems. (THz MEMS)ORCID iD: 0000-0002-8264-3231
KTH, School of Electrical Engineering and Computer Science (EECS), Intelligent systems, Micro and Nanosystems. (THz MEMS)ORCID iD: 0000-0003-3339-9137
2018 (English)Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents for the first time a very high isolation, low insertion loss MEMS waveguide single-pole singlethrow(SPST) switch operating in the 140-220 GHz frequency band. The high isolation is achieved by stacking threeMEMS chips, two of which contains MEMS-reconfigurable surface to block/unblock the signal in the waveguide. Thisdoubles the isolation and has little impact on the insertion loss and virtually no influence on the bandwidth. Themeasurement results of the prototype switch shows 50 to 60 dB isolation in the blocking state and 0.40 to 0.55 dBinsertion loss in the non-blocking state for the whole waveguide band. Additional measurements with reference chipshave shown that the MEMS reconfigurable surfaces of the two switch chips together contribute only to 0.1 to 0.3 dBinsertion loss. The switch bandwidth is limited only by the waveguide cut-off and not by the switch technology itself.

Place, publisher, year, edition, pages
2018.
Keywords [en]
RF MEMS, waveguide switch, millimeter-wave, micromachined waveguide, switch
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-264930OAI: oai:DiVA.org:kth-264930DiVA, id: diva2:1375724
Conference
The 8th ESA Workshop on Millimetre-Wave Technology and Applications
Note

QC 20191212

Available from: 2019-12-05 Created: 2019-12-05 Last updated: 2019-12-12Bibliographically approved

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