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UV-assisted gate bias cycling in gas-sensitive field-effect transistors
Linköping University, Department of Physics, Chemistry and Biology, Sensor and Actuator Systems. Linköping University, Faculty of Science & Engineering. Saarland University, Lab for Measurement Technology, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Sensor and Actuator Systems. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Sensor and Actuator Systems. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2817-3574
Saarland University, Saarbrücken, Germany.
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2018 (English)In: Proceedings, ISSN 2504-3900, Vol. 2, no 13, article id 999Article in journal (Refereed) Published
Abstract [en]

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

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MDPI, 2018. Vol. 2, no 13, article id 999
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Other Chemical Engineering
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URN: urn:nbn:se:liu:diva-162239DOI: 10.3390/proceedings2130999OAI: oai:DiVA.org:liu-162239DiVA, id: diva2:1372893
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EUROSENSORS 2018
Available from: 2019-11-25 Created: 2019-11-25 Last updated: 2020-01-14Bibliographically approved

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Bastuck, ManuelPuglisi, DonatellaLloyd Spetz, AnitaAndersson, Mike
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