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Adsorption-controlled growth and properties of epitaxial SnO films
Cornell Univ, NY 14853 USA; Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
Cornell Univ, NY 14853 USA.
Binghamton Univ, NY 13902 USA.
Cornell Univ, NY 14853 USA.
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2019 (English)In: PHYSICAL REVIEW MATERIALS, ISSN 2475-9953, Vol. 3, no 10, article id 105202Article in journal (Refereed) Published
Abstract [en]

When it comes to providing the unusual combination of optical transparency, p-type conductivity, and relatively high mobility, Sn2+-based oxides are promising candidates. Epitaxial films of the simplest Sn2+ oxide, SnO, are grown in an adsorption-controlled regime at 380 degrees C on Al2O3 substrates by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A commensurately strained monolayer and an accompanying van der Waals gap is observed near the substrate interface, promoting layers with high structural perfection notwithstanding a large epitaxial lattice mismatch (-12%). The unintentionally doped films exhibit p-type conductivity with carrier concentration 2.5 x 10(16) cm(-3) and mobility 2.4 cm(2) V(-1)s(-1) at room temperature. Additional physical properties are measured and linked to the Sn2+ valence state and corresponding lone-pair charge-density distribution.

Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2019. Vol. 3, no 10, article id 105202
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-161608DOI: 10.1103/PhysRevMaterials.3.105202ISI: 000491267200005OAI: oai:DiVA.org:liu-161608DiVA, id: diva2:1367938
Note

Funding Agencies|ASCENT - DARPA; National Science Foundation (NSF)National Science Foundation (NSF) [DGE-1650441]; NSF MRSEC ProgramNational Science Foundation (NSF)NSF - Directorate for Mathematical & Physical Sciences (MPS) [DMR-1719875]; NSFNational Science Foundation (NSF) [ECCS-1542081, DMR-0703406]; Air Force Office of Scientific ResearchUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA955018-1-0024]; U.S. Department of Energy (DOE) Office of Science User FacilityUnited States Department of Energy (DOE) [DEAC02-06CH11357]; Olle Engkvist Foundation; NSF [Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)] [DMR-1539918]

Available from: 2019-11-05 Created: 2019-11-05 Last updated: 2019-12-13

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Theoretical PhysicsFaculty of Science & Engineering
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