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Compact Macrospin-Based Model of Three-Terminal Spin-Hall Nano Oscillators
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0002-9919-9886
Department of Physics, University of Gothenburg.
KTH, School of Engineering Sciences (SCI), Applied Physics, Materials and Nanophysics. Department of Physics, University of Gothenburg.ORCID iD: 0000-0002-3513-6608
KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-0565-9907
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2019 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 55, no 10, article id 4003808Article in journal (Refereed) Published
Abstract [en]

Emerging spin-torque nano oscillators (STNOs) and spin-Hall nano oscillators (SHNOs) are potential candidates for microwave applications. Recent advances in three-terminal magnetic tunnel junction (MTJ)-based SHNOs opened the possibility to develop more reliable and well-controlled oscillators, thanks to individual spin Hall-driven precession excitation and read-out paths. To develop hybrid systems by integrating three-terminal SHNOs and CMOS circuits, an electrical model able to capture the analog characteristics of three-terminal SHNOs is needed. This model needs to be compatible with current electric design automation (EDA) tools. This work presents a comprehensive macrospin-based model of three-terminal SHNOs able to describe the dc operating point, frequency modulation, phase noise, and output power. Moreover, the effect of voltage-controlled magnetic anisotropy (VCMA) is included. The model shows good agreement with experimental measurements and could be used in developing hybrid three-terminal SHNO/CMOS systems.

Place, publisher, year, edition, pages
IEEE Press, 2019. Vol. 55, no 10, article id 4003808
Keywords [en]
Compact model, magnetic tunnel junction (MTJ), spin-Hall nano oscillator (SHNO)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-259715DOI: 10.1109/TMAG.2019.2925781ISI: 000487191400001OAI: oai:DiVA.org:kth-259715DiVA, id: diva2:1353171
Funder
Swedish Research Council
Note

QC 20190930

Available from: 2019-09-20 Created: 2019-09-20 Last updated: 2019-10-11Bibliographically approved

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