Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide
Linköping University, Department of Physics, Chemistry and Biology, Sensor and Actuator Systems. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Sensor and Actuator Systems. Linköping University, Faculty of Science & Engineering. Univ Saarland, Germany.
Univ Saarland, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Sensor and Actuator Systems. Linköping University, Faculty of Science & Engineering.
Show others and affiliations
2019 (English)In: JOURNAL OF SENSORS AND SENSOR SYSTEMS, ISSN 2194-8771, Vol. 8, no 2, p. 261-267Article in journal (Refereed) Published
Abstract [en]

To fulfil todays requirements, gas sensors have to become more and more sensitive and selective. Temperature-cycled operation has long been used to enhance the sensitivity and selectivity of metal-oxide semiconductor gas sensors and, more recently, silicon-carbide-based, gas-sensitive field-effect transistors (SiC-FETs). In this work, we present a novel method to significantly enhance the effect of gate bias on a SiC-FETs response, giving rise to new possibilities for static and transient signal generation and, thus, increased sensitivity and selectivity. A tungsten trioxide (WO3) layer is deposited via pulsed laser deposition as an oxide layer beneath a porous iridium gate, and is doped with 0.1 AT% of lithium cations. Tests with ammonia as a well-characterized model gas show a relaxation effect with a time constant between 20 and 30 s after a gate bias step as well as significantly increased response and sensitivity at +/- 2V compared to 0V. We propose an electric field-mediated change in oxygen surface coverage as the cause of this novel effect.

Place, publisher, year, edition, pages
COPERNICUS GESELLSCHAFT MBH , 2019. Vol. 8, no 2, p. 261-267
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
URN: urn:nbn:se:liu:diva-159713DOI: 10.5194/jsss-8-261-2019ISI: 000478667300001OAI: oai:DiVA.org:liu-159713DiVA, id: diva2:1343890
Note

Funding Agencies|European Cooperation in Science and Technology; Deutsche Forschungsgemeinschaft; Saarland University

Available from: 2019-08-19 Created: 2019-08-19 Last updated: 2019-09-11

Open Access in DiVA

fulltext(952 kB)27 downloads
File information
File name FULLTEXT01.pdfFile size 952 kBChecksum SHA-512
80fa1fefbaaf3d07557c61c78fb6eaa989a15e064a6fdc8e1f51ec9975432fffe2c15a7f0f117163589de21e7335c4dcf88a04bd23291eb496f03da80521c2c8
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Rodner, MariusBastuck, ManuelAndersson, Mike
By organisation
Sensor and Actuator SystemsFaculty of Science & Engineering
Other Engineering and Technologies not elsewhere specified

Search outside of DiVA

GoogleGoogle Scholar
Total: 27 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 39 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf