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Inkjet-printed stretchable and low voltage synaptic transistor array
Stanford University, Stanford, CA United States; KU Leuven, Leuven, Belgium.
Stanford University, Stanford, CA United States.
Stanford University, Stanford, CA United States; University of Cambridge, Cambridge, United Kingdom.
Stanford University, Stanford, CA United States.
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2019 (English)In: Nature Communications, ISSN 2041-1723, E-ISSN 2041-1723, Vol. 10, no 1, article id 2676Article in journal (Refereed) Published
Abstract [en]

Wearable and skin electronics benefit from mechanically soft and stretchable materials to conform to curved and dynamic surfaces, thereby enabling seamless integration with the human body. However, such materials are challenging to process using traditional microelectronics techniques. Here, stretchable transistor arrays are patterned exclusively from solution by inkjet printing of polymers and carbon nanotubes. The additive, non-contact and maskless nature of inkjet printing provides a simple, inexpensive and scalable route for stacking and patterning these chemically-sensitive materials over large areas. The transistors, which are stable at ambient conditions, display mobilities as high as 30 cm2 V−1 s−1 and currents per channel width of 0.2 mA cm−1 at operation voltages as low as 1 V, owing to the ionic character of their printed gate dielectric. Furthermore, these transistors with double-layer capacitive dielectric can mimic the synaptic behavior of neurons, making them interesting for conformal brain-machine interfaces and other wearable bioelectronics. 

Place, publisher, year, edition, pages
2019. Vol. 10, no 1, article id 2676
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URN: urn:nbn:se:miun:diva-36690DOI: 10.1038/s41467-019-10569-3Scopus ID: 2-s2.0-85067603295OAI: oai:DiVA.org:miun-36690DiVA, id: diva2:1336531
Available from: 2019-07-09 Created: 2019-07-09 Last updated: 2019-07-09Bibliographically approved

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