Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Electrical characterization of high k-dielectrics for 4H-SiC MIS devices
Univ Iceland, Iceland; Univ Educ Lahore, Pakistan.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Chalmers Univ Technol, Sweden.
Univ Iceland, Iceland.
Show others and affiliations
2019 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 98, p. 55-58Article in journal (Refereed) Published
Abstract [en]

We report promising results regarding the possible use of AlN or Al2O3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD) at 1100 degrees C. The amorphous Al2O3 films are grown by repeated deposition and subsequent low temperature (200 degrees C) oxidation of thin Al layers using a hot plate. Our investigation shows a very low density of interface traps at the AlN/4H-SiC and the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MIS capacitors. Current-voltage (IV) analysis shows that the breakdown electric field across the AlN or Al2O3 is similar to 3 MV/cm or similar to 5 MV/cm respectively. By depositing an additional SiO2 layer by plasma enhanced chemical vapor deposition at 300 degrees C on top of the AlN or Al2O3 layers, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC or Al2O3/SiC interfaces.

Place, publisher, year, edition, pages
ELSEVIER SCI LTD , 2019. Vol. 98, p. 55-58
Keywords [en]
Interface traps; AlN/4H-SiC interface; Al2O3/4H-SiC interface; MIS structure
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-156882DOI: 10.1016/j.mssp.2019.03.025ISI: 000465188500009OAI: oai:DiVA.org:liu-156882DiVA, id: diva2:1318858
Note

Funding Agencies|Icelandic Research Fund; Swedish Foundation for Strategic Research (SSF); Knut and Alice Wallenberg Foundation (KAW)

Available from: 2019-05-28 Created: 2019-05-28 Last updated: 2019-10-29

Open Access in DiVA

fulltext(784 kB)4 downloads
File information
File name FULLTEXT01.pdfFile size 784 kBChecksum SHA-512
1831e1f40252871e9a73b7fb1483205e3b273722b09fdafa2816972228b79576e16c65aadaaf0ac996050daaca49e4789f0a8093d08d4b6d364293e10a4d045b
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Chen, Jr-TaiKarhu, RobinUl-Hassan, JawadSveinbjörnsson, Einar
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Materials Science in Semiconductor Processing
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
Total: 4 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 16 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf