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Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
Royal Inst Technol KTH, Dept Appl Phys, Lab Semicond Mat, Electrum 229, S-16440 Kista, Sweden.
Univ Valladolid, Dept Fis Mat Condensada, GdS Optronlab Grp, Edificio LUCIA,Paseo Belen 19, Valladolid 47011, Spain.
Royal Inst Technol KTH, Dept Appl Phys, Unit Opt & Photon, Electrum 229, S-16440 Kista, Sweden.
Royal Inst Technol KTH, Dept Appl Phys, Unit Opt & Photon, Electrum 229, S-16440 Kista, Sweden.
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2019 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 9, no 3, p. 1488-1500Article in journal (Refereed) Published
Abstract [en]

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method.

Place, publisher, year, edition, pages
2019. Vol. 9, no 3, p. 1488-1500
National Category
Condensed Matter Physics
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URN: urn:nbn:se:uu:diva-379937DOI: 10.1364/OME.9.001488ISI: 000460134500051OAI: oai:DiVA.org:uu-379937DiVA, id: diva2:1299362
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Swedish Energy AgencySwedish Research CouncilAvailable from: 2019-03-26 Created: 2019-03-26 Last updated: 2019-03-26Bibliographically approved

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