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Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Center for III-Nitride Technology, C3NiT-Janzén)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology. (Center for III-Nitride Technology, C3NiT-Janzén)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Center for III-Nitride Technology, C3NiT-Janzén)
Peking Univ, Peoples R China.
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2019 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 9, no 1, article id 015114Article in journal (Refereed) Published
Abstract [en]

Obtaining high quality, wurtzite InN films with p-type conductivity is a challenge, and there is limited information about the photoluminescence (PL) characteristics of such films. In this study, we present a comprehensive PL study and discuss in detail the recombination processes in Mg-doped InN films with varying Mg concentrations. We find that at low Mg-doping of 1x10(18) cm(-3), which yields p-type conductivity, the PL in InN is spatially inhomogeneous. The latter is suggested to be associated with the presence of n-type pockets, displaying photoluminescence at 0.73 eV involving electrons at the Fermi edge above the conduction band edge. Increasing the Mg concentration to 2.9x10(19) cm(-3) in p-type InN yields strong and spatially uniform photoluminescence at 0.62 eV and 0.68 eV visible all the way to room temperature, indicating homogeneous p-type conductivity. An acceptor binding energy of 64 meV is determined for the Mg acceptor. Further increase of the Mg concentration to 1.8x10(20) cm(-3) leads to switching conductivity back to n-type. The PL spectra in this highly doped sample reveal only the emission related to the Mg acceptor (at 0.61 eV). In the low-energy tail of the emission, the multiple peaks observed at 0.54 - 0.58 eV are suggested to originate from recombination of carriers localized at stacking faults. (C) 2019 Author(s).

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2019. Vol. 9, no 1, article id 015114
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-154710DOI: 10.1063/1.5052432ISI: 000457407600044OAI: oai:DiVA.org:liu-154710DiVA, id: diva2:1292623
Note

Funding Agencies|Swedish Research Council (VR) [2016-00889]; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the Competence Center Program [2016-05190]; Swedish Foundation for Strategic Research (SSF) [FFL12-0181, RIF14-055, EM16-0024]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Faculty Grant SFO Mat LiU [2009-00971]

Available from: 2019-02-28 Created: 2019-02-28 Last updated: 2019-03-15

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Eriksson, Martin O.Khromov, SergeyPaskov, PlamenHoltz, Per-OlofMonemar, BoDarakchieva, Vanya
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