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Voltage dependency of photoelectrical memory in photoelectrical artificial synapse
KTH, School of Engineering Sciences in Chemistry, Biotechnology and Health (CBH). KTH, School of Electrical Engineering and Computer Science (EECS).ORCID iD: 0000-0002-1768-1071
Fudan University, SIST, State Key Laboratory of ASIC and System.
Fudan University, SIST, State Key Laboratory of ASIC and System.
KTH, School of Electrical Engineering and Computer Science (EECS). Fudan University, SIST, State Key Laboratory of ASIC and System.
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(English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646Article in journal, Editorial material (Other academic) Submitted
Abstract [en]

Recently, the newly reported photoelectrical artificial synapses have attracted a lot of intentions because of their light-memory function provided them great potential in using as a building block of new neuromorphic systems. By now, most of those devices were achieved based on the photoelectrical field effect transistors with persistent photoconductivity (PPC) effect. But the real application of these devices needs comprehensive understanding of their mechanism and the influence factors, which was rare. We here focused on the relationship of the photoelectrical response and the gate voltage, and did both experimental and theoretical investigations. A model based on indirect recombination was proposed to explain the observed phenomenon. Simulations using this model got consistent results as the experiments. Moreover, the voltage influence on specific performance metrics of the photoelectrical artificial synapses was discussed to provide direction in the practical applications.

Place, publisher, year, edition, pages
IEEE.
Keywords [en]
Photoconducting devices,Memories, Voltage
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-235736OAI: oai:DiVA.org:kth-235736DiVA, id: diva2:1253022
Note

QC 20181008

Available from: 2018-10-03 Created: 2018-10-03 Last updated: 2018-10-10Bibliographically approved
In thesis
1. Flexible Electrical and Photoelectrical Artificial Synapses for Neuromorphic Systems
Open this publication in new window or tab >>Flexible Electrical and Photoelectrical Artificial Synapses for Neuromorphic Systems
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Over the past decade, the field of personal electronic systems has trended toward mobile and wearable devices. However, the capabilities of existing electronic systems are overwhelmed by the computing demands at the wearable sensing stage. Two main bottlenecks are encountered. The first bottleneck is located within the computing module, between the processing units and the memory, and is known as the von-Neumann bottleneck. The second bottleneck is located between the sensing module and the computing module of the system.

Inspired by neuromorphic computing, an architecture of the sensitive neuromorphic network (SNN) is developed as a candidate for overcoming both bottlenecks. Suitable building blocks, especially in flexible form, must be developed. In this work, starting from the demand analysis and followed by prototype development, performance optimization, and feasibility testing, two kinds of critical devices were developed for fabricating a photosensitive neuromorphic network (PSNN).

A high-performance flexible electrical artificial synapse that is based on the electron-trapping mechanism was developed. In addition to the basic memristive features, multiple kinds of synaptic plasticity were also demonstrated, which enriched the collection of possible applications. Furthermore, optimization on multiple performance metrics was easily performed using the intrinsic features and structure of the device.

A new photoelectrical artificial synapse was also realized by successfully combining light signal sensing and processing in a single synapse. A flexible dual-mode photoelectrical synapse, which fulfilled the requirements of the designed PSNN working protocol, was demonstrated. The device showed gate-tunable photomemristive features, thereby enabling its application as a photoelectrical artificial synapse.

Using the newly developed devices and the proposed network architecture, this work successfully initiated a new area of research, namely, the sensitive neuromorphic network, and provided a valid solution that addresses the current limitations of existing wearable electronic systems.

Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 2018. p. 58
Series
TRITA-CBH-FOU ; 2018:46
Keywords
Flexible electronics, Neuromorphic network, Memristor, Electron trapping, Electrical artificial synapse, Photoelectrical artificial synapse
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Applied Medical Technology
Identifiers
urn:nbn:se:kth:diva-235742 (URN)978-91-7729-979-0 (ISBN)
Public defence
2018-10-31, T2, Hälsovägen 11C, Huddinge, 09:00 (English)
Opponent
Supervisors
Note

QC 20181008

Available from: 2018-10-08 Created: 2018-10-08 Last updated: 2018-10-08Bibliographically approved

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Yang, KunlongSeoane, Fernando
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