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Hydrogen Concentration in Photovoltaic a-Si:H Annealed at Different Temperatures Measured by Neutron Reflectometry
Inst Energy Thchnol, NO-2027 Kjeller, Norway.
Inst Energy Thchnol, NO-2027 Kjeller, Norway.
Inst Energy Thchnol, NO-2027 Kjeller, Norway.
Inst Energy Thchnol, NO-2027 Kjeller, Norway.
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2018 (English)In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 8, no 4, p. 1098-1101Article in journal (Refereed) Published
Abstract [en]

Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is, however, unstable with regard to hydrogen (H) desorption at elevated temperatures, which can be an issue during processing and device manufacturing. In this work, we determine the temperature stability of a-Si:H by structural characterization of a-Si:H/Si bilayers with neutron reflectometry and X-ray reflectometry combined with photoconductance measurements, yielding the minority carrier lifetime. The neutrons are sensitive to light elements such as H, while the X-rays, which are insensitive to the H concentration, provide an independent constraint on the layer structure. It is shown that H desorption takes place at a temperature of approximately T = 425 degrees C, and that the H content and minority carrier lifetimes have a strongly correlated linear relationship, which can be interpreted as one H atom passivating one defect.

Place, publisher, year, edition, pages
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , 2018. Vol. 8, no 4, p. 1098-1101
Keywords [en]
Amorphous materials, silicon, solar energy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-359995DOI: 10.1109/JPHOTOV.2018.2838447ISI: 000436007400027OAI: oai:DiVA.org:uu-359995DiVA, id: diva2:1248278
Available from: 2018-09-14 Created: 2018-09-14 Last updated: 2018-09-14Bibliographically approved

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