Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Wideband 220 – 330 GHz Turnstile OMT Enabled by Silicon Micromachining
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0002-8894-7930
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0002-8264-3231
KTH, School of Electrical Engineering and Computer Science (EECS), Micro and Nanosystems.ORCID iD: 0000-0003-3339-9137
2018 (English)In: 2018 IEEE MTT-S International Microwave Symposium (IMS), 2018Conference paper, Poster (with or without abstract) (Refereed)
Abstract [en]

This paper is the first publication on the first turnstile-junction orthogonal mode transducer (OMT) above110GHz, which is enabled by silicon micromachining. Incontrast to other OMT concepts, turnstile OMTs are wideband and allow for co-planar ports, but require accurate and complex fabrication and have therefore, to the best of our knowledge,not been implemented above 110GHz in any technology. As shown in this paper, the fabrication and assembly accuracy of silicon micromachining enables the realization of such complex OMT designs at 220 – 330GHz with excellent performance. The measured insertion loss is better than 0.7dB for the whole waveguide band, with mean values of 0.34dB and 0.48 dB for the vertical and horizontal polarizations, respectively. The measured return loss for both polarizations, even with an open ended common port, is better than 14dB for the whole waveguide band, and an average level of 18dB. An estimation of the worst-case cross-polarization level, derived from measurements, results in at least 20dB for the whole waveguide band, with an average of 25dB for the upper half of the band.

Place, publisher, year, edition, pages
2018.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-232959OAI: oai:DiVA.org:kth-232959DiVA, id: diva2:1236951
Conference
2018 IEEE MTT-S International Microwave Symposium (IMS)
Funder
Swedish Foundation for Strategic Research , SE13-007EU, Horizon 2020, 616846
Note

QC 20180807

Available from: 2018-08-06 Created: 2018-08-06 Last updated: 2018-08-07Bibliographically approved

Open Access in DiVA

fulltext(2790 kB)6 downloads
File information
File name FULLTEXT01.pdfFile size 2790 kBChecksum SHA-512
96c27d2f21313146c42a14462e5457c47298c61723310b2db3de0485484ac00146ff7319f8fe9bbedfbed2bc79b8e926664e8c7be59080e23eadfac4605946fd
Type fulltextMimetype application/pdf

Search in DiVA

By author/editor
Gomez-Torrent, AdrianShah, UmerOberhammer, Joachim
By organisation
Micro and Nanosystems
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
Total: 6 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

urn-nbn

Altmetric score

urn-nbn
Total: 4 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf