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Ultra-Thin Ag Films on the Sn/Si(111)-√3×√3 Surface Studied by STM
Karlstad University, Faculty of Health, Science and Technology (starting 2013), Department of Engineering and Physics (from 2013).
2018 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesisAlternative title
Ultratunna Ag-filmer på Sn/Si(111)-√3×√3 ytan studerat med STM (Swedish)
Abstract [en]

The growth of atomically flat silver films on Si(111) usually requires a two-step growth, including deposition at low temperature (≈100 K) followed by slowly annealing to room temperature. In addition, flat silver films are usually only obtained on Si(111) for film thicknesses larger than the critical thickness of 6 monolayer. In this work, Ag thin film formation at ambient temperature on Sn/Si(111)-√3×√3 has been investigated experimentally using a combination of scanning tunneling microscopy, scanning tunneling spectroscopy and low-energy electron diffraction. The first buffer layer, probably consisting of both Ag and Sn, formed a partially ordered structure consisting of atomic rows which mainly followed the high-symmetry directions of the underlying Si(111) lattice. From 3 ML coverage, an atomically flat Ag film was formed. Low-energy electron diffraction confirmed that the films grew in the [111]-direction. This shows that atomically flat Ag films as thin as 3 ML can be grown on Sn/Si(111)-√3×√3 by conventional deposition at room temperature. The electronic structures of the films were studied for a range of different coverages by scanning tunneling spectroscopy. The normalized tunneling conductance showed quantum well states in the occupied electronic states, which moved towards the Fermi energy with increasing film thicknesses. 

Place, publisher, year, edition, pages
2018. , p. 59
Keywords [en]
Silver, Silicon, Tin, Metal-semiconductor interfaces, Thin metal films, Scanning tunneling microscopy, Quantum size effects
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kau:diva-67779OAI: oai:DiVA.org:kau-67779DiVA, id: diva2:1220502
Subject / course
Physics
Educational program
Engineering: Engineering Physics (300 ECTS credits)
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Examiners
Available from: 2018-06-21 Created: 2018-06-18 Last updated: 2018-06-21Bibliographically approved

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Condensed Matter Physics

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CiteExportLink to record
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