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Coexistence of type-I and type-II band line-ups in 1-2 monolayer thick GaN/AlN single quantum wells
Ioffe Inst, Russia.
Ioffe Inst, Russia.
Ioffe Inst, Russia.
Univ Notre Dame, IN 46556 USA.
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2017 (English)In: 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017), IOP PUBLISHING LTD , 2017, Vol. 917, article id 062050Conference paper, Published paper (Refereed)
Abstract [en]

GaN/AlN quantum wells (QWs) with varied nominal thickness of 0.5-4 monolayers have been studied by time-resolved photoluminescence (PL) spectroscopy. The structures demonstrate an emission peak with the thickness-dependent wavelength in the range 225-320 nm. The observed temporal behavior of PL between 225 and 280 nm can be described as a superposition of fast and slow decaying components with characteristic decay time constants of the order of 0.1-0.7 ns and 7-30 ns, respectively. The fast PL component with the decay time smaller than 1 ns dominates in the thicker GaN insertions and tends to vanish in the thinnest ones, where the slow PL component becomes progressively longer. These observations imply formation in the GaN/AlN monolayer-thick layers of an inhomogeneous excitonic system involving both direct and indirect in space excitons.

Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2017. Vol. 917, article id 062050
Series
Journal of Physics Conference Series, ISSN 1742-6588
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-145498DOI: 10.1088/1742-6596/917/6/062050ISI: 000423729100161OAI: oai:DiVA.org:liu-145498DiVA, id: diva2:1187153
Conference
4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN)
Note

Funding Agencies|Government of the Russian Federation [14.W03.31.0011]

Available from: 2018-03-02 Created: 2018-03-02 Last updated: 2018-04-13

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