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Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing
Department of Materials Science and Engineering, Trondheim, Norway.ORCID iD: 0000-0002-4353-5326
Department for Solar Energy, IFE, Kjeller, Norway.
Sintef Materials and Chemistry, Trondheim, Norway.
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
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2018 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 123, no 5, p. 1-6, article id 055705Article in journal (Refereed) Published
Abstract [en]

In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018. Vol. 123, no 5, p. 1-6, article id 055705
Keywords [en]
solar cells, silicon, multicrystalline, high-performance multicrystalline silicon, grain boundaries, recombination
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-66289DOI: 10.1063/1.5018797Scopus ID: 2-s2.0-85041923751OAI: oai:DiVA.org:kau-66289DiVA, id: diva2:1182348
Funder
Swedish Energy Agency, 40184-1Available from: 2018-02-13 Created: 2018-02-13 Last updated: 2018-06-20Bibliographically approved

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Adamczyk, KrzysztofRinio, Markus
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