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SYSTEMATICCHARACTERIZATION OFTHIN FILM LAYERS FORTHE DEVELOPMENT OFVERTICAL GaN-BASEDMISFETS
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2017 (English)Independent thesis Advanced level (professional degree), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

A systematic study was conducted on MIS capacitors, breakdown structures andTLM structures to study the quality of dierent layers and processes involvedin the manufacturing of vertical-enhancement-mode MISFETs. Furthermore, theinuence of of a nal post-metalization annealing-step is analyzed drawing theconclusion that it is advantageous to submit nal MISFET devices to an annealingprocess lasting at least 30 minutes and to a minimum of 300C to improve themodulation capabilities of the MISFET's gate module, although degradation ispresent on both metal contacts and the blocking capabilities of the p GaN layer.

Place, publisher, year, edition, pages
2017.
Series
UPTEC F, ISSN 1401-5757 ; 17055
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-341380OAI: oai:DiVA.org:uu-341380DiVA, id: diva2:1181093
Educational program
Master Programme in Engineering Physics
Examiners
Available from: 2018-02-07 Created: 2018-02-07 Last updated: 2018-02-16Bibliographically approved

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fulltext(4090 kB)22 downloads
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