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A Very Low Loss 220–325 GHz Silicon Micromachined Waveguide Technology
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0001-5662-6748
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-8514-6863
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-8264-3231
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0003-3339-9137
2018 (English)In: IEEE Transactions on Terahertz Science and Technology, ISSN 2156-342X, E-ISSN 2156-3446, Vol. 8, no 2, p. 248-250Article in journal (Refereed) Published
Abstract [en]

This letter reports for the first time on a very low loss silicon micromachined waveguide technology, implemented for the frequency band of 220–325 GHz. The waveguide is realized by utilizing a double H-plane split in a three-wafer stack. This ensures very low surface roughness, in particular on the top and bottom surfaces of the waveguide, without the use of any surface roughness reduction processing steps. This is superior to previous micromachined waveguide concepts, including E-plane and single H-plane split waveguides. The measured average surface roughness is 2.14 nm for the top/bottom of the waveguide, and 163.13 nm for the waveguide sidewalls. The measured insertion loss per unit length is 0.02–0.07 dB/mm for 220–325 GHz, with a gold layer thickness of 1 μm on the top/bottom and 0.3 μm on the sidewalls. This represents, in this frequency band, the lowest loss for any silicon micromachined waveguide published to date and is of the same order as the best metal waveguides.

Place, publisher, year, edition, pages
IEEE, 2018. Vol. 8, no 2, p. 248-250
Keywords [en]
micromachined waveguide, RF MEMS, rectangular waveguide, submillimeter-wave, terahertz
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-222100DOI: 10.1109/TTHZ.2018.2791841ISI: 000426705300014Scopus ID: 2-s2.0-85041371866OAI: oai:DiVA.org:kth-222100DiVA, id: diva2:1178970
Projects
SSF Swedish Foundation for Strategic Research, Synergy Grant Electronics SEl3-007
Funder
Swedish Foundation for Strategic Research , SEl3-007EU, European Research Council, 616846
Note

QC 20180206

Available from: 2018-01-31 Created: 2018-01-31 Last updated: 2018-03-26Bibliographically approved

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