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Highly conductive ultrathin Co films by high-power impulse magnetron sputtering
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.ORCID iD: 0000-0003-4317-9701
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 4, article id 043103Article in journal (Refereed) Published
Abstract [en]

Ultrathin Co films deposited on SiO2 with conductivities exceeding that of Cu are demonstrated. Ionized deposition implemented by high-power impulse magnetron sputtering (HiPIMS) is shown to result in smooth films with large grains and low resistivities, namely, 14 mu Omega cm at a thickness of 40 nm, which is close to the bulk value of Co. Even at a thickness of only 6 nm, a resistivity of 35 mu Omega cm is obtained. The improved film quality is attributed to a higher nucleation density in the Co-ion dominated plasma in HiPIMS. In particular, the pulsed nature of the Co flux as well as shallow ion implantation of Co into SiO2 can increase the nucleation density. Adatom diffusion is further enhanced in the ionized process, resulting in a dense microstructure. These results are in contrast to Co deposited by conventional direct current magnetron sputtering where the conductivity is reduced due to smaller grains, voids, rougher interfaces, and Ar incorporation. The resistivity of the HiPIMS films is shown to be in accordance with models by Mayadas-Shatzkes and Sondheimer which consider grain-boundary and surface-scattering.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2018. Vol. 112, no 4, article id 043103
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Materials Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-340315DOI: 10.1063/1.5011109ISI: 000423724300039OAI: oai:DiVA.org:uu-340315DiVA, id: diva2:1178358
Funder
Swedish Foundation for Strategic Research , SE13-0033Swedish Foundation for Strategic Research , RIF14-0053Swedish Research Council, C0514401Available from: 2018-01-29 Created: 2018-01-29 Last updated: 2018-04-04Bibliographically approved

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