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A computational study on indium nitride ALD precursors and surface chemical mechanism
Linköping University, Department of Physics, Chemistry and Biology, Chemistry.
2018 (English)Independent thesis Advanced level (degree of Master (Two Years)), 40 credits / 60 HE creditsStudent thesis
Abstract [en]

Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be grown using Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD), but the availability of precursors and knowledge of the underlaying chemical reactions is limited. In this study the gas phase decomposition of a new indium precursor, N,N-dimethyl-N',N''-diisopropylguanidinate, has been investigated by quantum chemical methods for use in both CVD and ALD of indium nitride. The computations showed significant decomposition at around 250°C, 3 mbar indicating that the precursor is unstable at ALD conditions. A computational study of the surface chemical mechanism of the adsorption of trimethylindium and ammonia on indium nitride was also performed as a method development for other precursor surface mechanism studies. The results show, in accordance with experimental data, that the low reactivity of ammonia is a limiting factor in thermal ALD growth of indium nitride with trimethylindium and ammonia.

Place, publisher, year, edition, pages
2018. , p. 19
Keywords [en]
Computational Chemistry, Chemical Vapour Deposition, Atomic Layer Deposition, Indium nitride, gas phase decomposition, surface mechanism
National Category
Physical Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-144426ISRN: LITH-IFM-A-EX--18/3437--SEOAI: oai:DiVA.org:liu-144426DiVA, id: diva2:1177404
Subject / course
Chemistry
Presentation
2018-01-12, 14:00 (English)
Supervisors
Examiners
Available from: 2018-01-25 Created: 2018-01-25 Last updated: 2018-01-25Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • ieee
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  • Other style
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Language
  • de-DE
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Output format
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