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Protective amorphous carbon coatings on glass substrates
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. (The Plasma group)ORCID iD: 0000-0002-1499-139X
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. (The Plasma group)
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. (The plasma group)
2017 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 7, no 11, article id 115206Article in journal (Refereed) Published
Abstract [en]

Thick amorphous carbon films were deposited by the Magnets-in-Motion (M-M) rf linear hollow cathode at varying acetylene contents in Ar in a hybrid PVD/PE-CVD process directly on glass substrates. The hollow cathode plates manufactured from graphite were used as the PVD target. The measurements show that the films can reach thickness of up to 50 mu m at deposition rates of up to 2.5 mu m/min. Scratch test measurements confirm that well adhering films several mu m thick can be achieved at C2H2 contents of up to 0.5%.

Place, publisher, year, edition, pages
USA: American Institute of Physics (AIP), 2017. Vol. 7, no 11, article id 115206
National Category
Manufacturing, Surface and Joining Technology
Research subject
Engineering Science with specialization in Tribo Materials
Identifiers
URN: urn:nbn:se:uu:diva-335470DOI: 10.1063/1.5002091ISI: 000416825700056OAI: oai:DiVA.org:uu-335470DiVA, id: diva2:1163026
Projects
EIT KIC InnoEnergy IncoTrans
Funder
Swedish Energy AgencyAvailable from: 2017-12-05 Created: 2017-12-05 Last updated: 2018-03-19Bibliographically approved
In thesis
1. Plasma Enhanced Chemical- and Physical- Vapor Depositions Using Hollow Cathodes
Open this publication in new window or tab >>Plasma Enhanced Chemical- and Physical- Vapor Depositions Using Hollow Cathodes
2018 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Development of coating deposition technologies, in terms of performance and costs, is an ongoing process. A promising class of deposition technologies are based on hollow cathode discharges.

This thesis investigates performance of selected hollow cathode plasma sources developed at the Plasma group, at Uppsala University for coating deposition at moderate pressures. Amorphous carbon film deposition was investigated by Radio frequency (RF) Hollow Cathode Plasma Jet (RHCPJ) and Magnets-in-Motion (M-M) linear hollow cathode plasma sources. Titanium nitride (TiN) films were deposited by a magnetized Hollow Cathode Enhanced magnetron Target (HoCET). Aluminium nitride (AlN) deposition by RHCPJ was compared with High Power Impulse Magnetron Sputtering (HiPIMS).

Amorphous carbon films were prepared on glass substrates without an interlayer. The AlN and TiN films were deposited on Si substrates. Optical emission spectroscopy was used to analyze plasma composition. The coating structure was analyzed by X-ray diffraction and Raman spectroscopy. The thickness of films was measured by scanning electron microscopy and profilometry. The TiN hardness was analyzed by microhardness test method and confirmed by nanoindentation analysis.

Adherent amorphous carbon coating deposition process was transferred from RHCPJ to the M-M linear hollow cathode. Utilizing the latter plasma source, it was found that thick and adherent amorphous carbon coatings can be deposited in a range of 0.25% to 0.5% of C2H2 in Ar at constant a deposition pressure of 0.3 Torr and 1200 W of RF power. Deposition rates of 0.2 μm/min and 0.375 μm/min respectively were reached. Self-delaminating, thick (50 μm) amorphous carbon films can be deposited at a deposition rate of 2.5 μm/min at 2% C2H2. A non-linear relation was observed between the deposition rate and the C2H2 content.

Utilizing the HoCET arrangement, high deposition rates of stoichiometric, polycrystalline TiN films are obtained. A maximum of 0.125 μm/min is obtained at 2.4% N2 in Ar, 1200 W RF power, 14 mTorr deposition pressure. TiN films deposited at 4 - 20% nitrogen contents displayed hardness values above 28 GPa reaching a maximum of 31.4 GPa at 5% N2.

For a (002) oriented AlN film deposition the RHCPJ offers deposition rates of up to 150 nm/min. Using the HiPIMS at comparable deposition conditions the AlN films were achieved at a rate of 24 nm/min.

Place, publisher, year, edition, pages
Uppsala: Acta Universitatis Upsaliensis, 2018. p. 73
Series
Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, ISSN 1651-6214 ; 1629
Keywords
Hollow cathode, TiN, AlN, amorphous carbon, hybrid PVD/PE-CVD, ionized magnetron
National Category
Manufacturing, Surface and Joining Technology
Identifiers
urn:nbn:se:uu:diva-340572 (URN)978-91-513-0230-0 (ISBN)
Public defence
2018-03-23, Polhemssalen (Ång/10134), Ångströmlaboratoriet, Lägerhyddsvägen 1, 75237, Uppsala, 09:15 (English)
Opponent
Supervisors
Projects
EIT KIC InnoEnergy IncoTrans
Funder
Swedish Energy Agency
Available from: 2018-02-27 Created: 2018-02-01 Last updated: 2018-04-03

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