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Evaluating the Sources of Graphene's Resistivity Using Differential Conductance
King Mongkuts Inst Technol Ladkrabang, Dept Phys, Bangkok 10520, Thailand..
SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA..
SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA..
SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA..
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2017 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 7, article id 10317Article in journal (Refereed) Published
Abstract [en]

We explore the contributions to the electrical resistance of monolayer and bilayer graphene, revealing transitions between different regimes of charge carrier scattering. In monolayer graphene at low densities, a nonmonotonic variation of the resistance is observed as a function of temperature. Such behaviour is consistent with the influence of scattering from screened Coulomb impurities. At higher densities, the resistance instead varies in a manner consistent with the influence of scattering from acoustic and optical phonons. The crossover from phonon-, to charged-impurity, limited conduction occurs once the concentration of gate-induced carriers is reduced below that of the residual carriers. In bilayer graphene, the resistance exhibits a monotonic decrease with increasing temperature for all densities, with the importance of short-range impurity scattering resulting in a "universal" density-independent ( scaled) conductivity at high densities. At lower densities, the conductivity deviates from this universal curve, pointing to the importance of thermal activation of carriers out of charge puddles. These various assignments, in both systems, are made possible by an approach of "differential-conductance mapping", which allows us to suppress quantum corrections to reveal the underlying mechanisms governing the resistivity.

Place, publisher, year, edition, pages
NATURE PUBLISHING GROUP , 2017. Vol. 7, article id 10317
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Physical Sciences
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URN: urn:nbn:se:uu:diva-335403DOI: 10.1038/s41598-017-10367-1ISI: 000408997700016PubMedID: 28871185OAI: oai:DiVA.org:uu-335403DiVA, id: diva2:1162897
Available from: 2017-12-05 Created: 2017-12-05 Last updated: 2017-12-05Bibliographically approved

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