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Coexistence of strongly buckled germanene phases on Al(111)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2017 (English)In: Beilstein Journal of Nanotechnology, ISSN 2190-4286, Vol. 8, p. 1946-1951Article in journal (Refereed) Published
Abstract [en]

We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (3x3) or (root 7x root 7)R +/- 19.1 degrees reconstructions. First-principles calculations based on density functional theory suggest an atomic model consisting of a strongly buckled (2x2) germanene layer, which is stable in two different orientations on Al(111). Simulated STM of both orientations fit nicely with experimental STM images and the Ge 3d core-level data decomposed into four components is consistent with the suggested model.

Place, publisher, year, edition, pages
BEILSTEIN-INSTITUT , 2017. Vol. 8, p. 1946-1951
Keywords [en]
core-level spectroscopy; DFT; germanene; STM
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-142181DOI: 10.3762/bjnano.8.195ISI: 000412217800001PubMedID: 29046842OAI: oai:DiVA.org:liu-142181DiVA, id: diva2:1151546
Note

Funding Agencies|Swedish Research Council [621-2014-4764, 2008-6582]; Swedish National Infrastructure for Computing (SNIC)

Available from: 2017-10-23 Created: 2017-10-23 Last updated: 2017-11-15

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