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Realization of quantum dots emitting at 1.55µm for single photon emitters
KTH, School of Information and Communication Technology (ICT).
2017 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

This thesis reports is about the fabrication and characterization of InAs self-assembled quantum dots (QDs) using both InP and GaAs substrates for the realization of telecommunication-wavelength single-photon sources for quantum communication. The QDs were grown by metal organic vapour phase epitaxy (MOVPE) using the strain-driven Stranski-Krastanov formation mechanism. InAs QDs realized using an In-rich metamorphic matrix material grown on GaAs revealed narrow and bright low-temperature (4K) PL emission lines from isolated QDs up to a wavelength of 1.55 µm. These QDs offer an interesting alternative to InAs/InP QDs single-photon emitters for the telecommunication regime.

Place, publisher, year, edition, pages
2017. , p. 77
Series
TRITA-ICT-EX ; 2017:168
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-215713OAI: oai:DiVA.org:kth-215713DiVA, id: diva2:1149089
Subject / course
Engineering Physics
Educational program
Degree of Master
Supervisors
Examiners
Available from: 2017-10-13 Created: 2017-10-13 Last updated: 2017-10-13Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • ieee
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  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
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  • asciidoc
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