Luminescence blinking of a Si quantum dot in a SiO2 shell
2005 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 71, no 11, 115331-1-115331-5 p.Article in journal (Refereed) Published
The phenomenon of on-off luminescence intermittency - blinking - in silicon nanocrystals was studied using a single-dot microphotoluminescence technique. From recordings of the luminescence intensity trace, on- and off-time distributions were extracted revealing exponential behavior, as expected for systems with blinking of a purely random nature. The corresponding switching rates for on-off and off-on processes exhibit different dependence on the excitation intensity. While the on-off switching rate grows quadratically with the excitation, the inverse process is nearly pumping power independent. Experimental findings are interpreted in terms of a dot "charging" model, where a carrier may become trapped in the surrounding matrix due to thermal and Auger-assisted processes. Observed blinking kinetics appear to be different from that of porous silicon particles.
Place, publisher, year, edition, pages
The American Physical Society , 2005. Vol. 71, no 11, 115331-1-115331-5 p.
silicon, silicon dioxide, analytic method, article, comparative study, crystal structure, kinetics, luminescence, mathematical model, photoluminescence, quantum dot, recording
Condensed Matter Physics Physical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-6698DOI: 10.1103/PhysRevB.71.115331ISI: 000228065500106ScopusID: 2-s2.0-20044378177OAI: oai:DiVA.org:kth-6698DiVA: diva2:11479
QC 201009212012-01-182006-12-292012-01-18Bibliographically approved