Narrow luminescence linewidth of a silicon quantum dot
2005 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 94, no 8, 087405 (1)-087405 (4) p.Article in journal (Refereed) Published
Single-dot luminescence spectroscopy was used to study the emission linewidth of individual silicon nanocrystals from low temperatures up to room temperature. The results show a continuous line narrowing towards lower temperatures with a linewidth as sharp as 2 meV at 35 K. This value, clearly below the thermal broadening at this temperature, proves the atomiclike emission from silicon quantum dots subject to quantum confinement. The low temperature measurements further reveal a similar to6 meV replica, whose origin is discussed. In addition, an similar to60 meV TO-phonon replica was detected, which is only present in a fraction of the dots.
Place, publisher, year, edition, pages
American Physical Society , 2005. Vol. 94, no 8, 087405 (1)-087405 (4) p.
electron-phonon interactions, photoluminescence spectroscopy, semiconductor nanocrystals, porous silicon, confinement
IdentifiersURN: urn:nbn:se:kth:diva-6697DOI: 10.1103/PhysRevLett.94.087405ISI: 000227386000066ScopusID: 2-s2.0-18144403210OAI: oai:DiVA.org:kth-6697DiVA: diva2:11478
QC 201009222012-01-112006-12-292012-01-11Bibliographically approved