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Photochemical conversion of tin-oxo cage compounds studied using hard x-ray photoelectron spectroscopy
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and Condensed Matter Physics.ORCID iD: 0000-0002-6471-1093
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2017 (English)In: Journal of Micro/Nanolithography, ISSN 1932-5150, E-ISSN 1932-5134, Vol. 16, no 2, article id 023510Article in journal (Refereed) Published
Abstract [en]

Molecular inorganic materials are currently considered photoresists for extreme ultraviolet lithography (EUVL). Their high EUV absorption cross section and small building block size potentially allow high sensitivity and resolution as well as low line-edge roughness. The photochemical reaction mechanisms that allow these kinds of materials to function as photoresists, however, are still poorly understood. We discuss photochemical reactions upon deep UV (DUV) irradiation of a model negative-tone EUV photoresist material, namely the well-defined molecular tin-oxo cage compound [(SnBu)12O14(OH)6](OH)2, which is spin-coated to thin layers of 20 nm. The core electronic structures (Sn 3d, O 1s, and C 1s) of unexposed and DUV exposed films were then investigated using synchrotron radiation-based hard x-ray photoelectron spectroscopy. Different chemical oxidation states and concentrations of atoms and atom types in the unexposed and exposed films were found. We observed that the exposure in a nitrogen atmosphere prevented the oxidation but still led to carbon loss, albeit with a smaller conversion. Finally, a mechanistic hypothesis for the basic DUV photoreactions in molecular tin-oxo cages is proposed.

Place, publisher, year, edition, pages
2017. Vol. 16, no 2, article id 023510
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Atom and Molecular Physics and Optics
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URN: urn:nbn:se:uu:diva-327125DOI: 10.1117/1.JMM.16.2.023510ISI: 000404163900011OAI: oai:DiVA.org:uu-327125DiVA, id: diva2:1129517
Available from: 2017-08-04 Created: 2017-08-04 Last updated: 2017-10-19Bibliographically approved

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