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Electron tomography analysis of 3D interfacial nanostructures appearing in annealed Si rich SiC films
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
Delft Univ Technol, Photovolta Mat & Devices, Mekelweg 4, NL-2628 CD Delft, Netherlands..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.ORCID iD: 0000-0002-0074-1349
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2017 (English)In: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 9, no 20, p. 6703-6710Article in journal (Refereed) Published
Abstract [en]

The optical and electrical properties of Si rich SiC (SRSC) solar cell absorber layers will strongly depend on interfacial layers between the Si and the SiC matrix and in this work, we analyze hitherto undiscovered interfacial layers. The SRSC thin films were deposited using a plasma-enhanced chemical vapor deposition (PECVD) technique and annealed in a nitrogen environment at 1100 degrees C. The thermal treatment leads to metastable SRSC films spinodally decomposed into a Si-SiC nanocomposite. After the thermal treatment, the coexistence of crystalline Si and SiC nanostructures was analysed by high resolution transmission electron microscopy (HRTEM) and electron diffraction. From the quantitative extraction of the different plasmon signals from electron energy-loss spectra, an additional structure, amorphous SiC (a-SiC) was found. Quantitative spectroscopic electron tomography was developed to obtain three dimensional (3D) plasmonic maps. In these 3D spectroscopic maps, the Si regions appear as network structures inside the SiC matrix where the a-SiC appears as an interfacial layer separating the matrix and Si network. The presence of the a-SiC interface can be explained in the framework of the nucleation and growth model.

Place, publisher, year, edition, pages
ROYAL SOC CHEMISTRY , 2017. Vol. 9, no 20, p. 6703-6710
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Physical Sciences Engineering and Technology
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URN: urn:nbn:se:uu:diva-326227DOI: 10.1039/c7nr00799jISI: 000402034400012PubMedID: 28485440OAI: oai:DiVA.org:uu-326227DiVA, id: diva2:1119543
Funder
EU, FP7, Seventh Framework Programme, 246310Swedish Research Council, C0357901Knut and Alice Wallenberg FoundationAvailable from: 2017-07-04 Created: 2017-07-04 Last updated: 2017-07-12Bibliographically approved

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