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High-temperature characterisation and analysis of leakage-current-compensated, low-power bandgap temperature sensors
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.ORCID iD: 0000-0002-8216-832X
Department of Physics, Imperial College, London.
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.ORCID iD: 0000-0003-4958-146X
2017 (English)In: Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, E-ISSN 1573-1979, Vol. 93, no 1, p. 137-147Article in journal (Refereed) Published
Abstract [en]

This paper analyses leakage current compensation techniques for low-power, bandgap temperature sensors. Experiments are conducted for circuits that compensate for collector-substrate, collector-base, body-drain and source-body leakage currents in a Brokaw bandgap sensor. The sensors are characterised and their failure modes are analysed at temperatures from 60 to 230∘C">230 ∘ C 230∘C . It is found that the most appropriate compensation circuit depends on the accuracy requirements of the application and on whether a stable reference voltage is required by other parts of the circuit. Experiments show that the power consumption is dominated by leakage current at high temperatures. One type of sensor was seen to consume 260 nW at 60∘C">60 ∘ C 60∘C , 2.1μW">2.1μW 2.1μW at 200∘C">200 ∘ C 200∘C and 14μW">14μW 14μW at 230∘C">230 ∘ C 230∘C . This work is motivated by the need to accurately monitor the temperature of power semiconductors in order to predict emerging faults in power semiconductor modules, a task for which cheap, single-chip, low-power, high-temperature, wireless bandgap temperature sensors are appropriate.

Place, publisher, year, edition, pages
Springer, 2017. Vol. 93, no 1, p. 137-147
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Industrial Electronics
Identifiers
URN: urn:nbn:se:ltu:diva-64629DOI: 10.1007/s10470-017-1011-6ISI: 000410451100013Scopus ID: 2-s2.0-85025077050OAI: oai:DiVA.org:ltu-64629DiVA, id: diva2:1117530
Note

Validerad;2017;Nivå 2;2017-09-26 (andbra)

Available from: 2017-06-29 Created: 2017-06-29 Last updated: 2018-07-10Bibliographically approved

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