Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Understanding the microwave annealing of silicon
Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China..
Show others and affiliations
2017 (English)In: AIP Advances, ISSN 2158-3226, E-ISSN 2158-3226, Vol. 7, no 3, 035214Article in journal (Refereed) Published
Abstract [en]

Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2017. Vol. 7, no 3, 035214
National Category
Nano Technology Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-320829DOI: 10.1063/1.4978912ISI: 000397862300058OAI: oai:DiVA.org:uu-320829DiVA: diva2:1091469
Available from: 2017-04-26 Created: 2017-04-26 Last updated: 2017-04-26Bibliographically approved

Open Access in DiVA

fulltext(2719 kB)52 downloads
File information
File name FULLTEXT01.pdfFile size 2719 kBChecksum SHA-512
af7cc25ef6e3cb06d90353b1a304afb003ab8b8bbac43266997d2456527947f31269af63e5a471f7ea814a616e9a57bdb9c419b1bca4f1e8140dfd3bed8d698b
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Zhang, Shi-Li
By organisation
Solid State Electronics
In the same journal
AIP Advances
Nano TechnologyPhysical Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 52 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 203 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf