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Modelling the temperature dependences of Silicon Carbide BJTs
KTH, School of Information and Communication Technology (ICT).
2016 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Silicon Carbide (SiC), owing to its large bandgap, has proved itself to be a very viable semiconductor material for the development of extreme temperature electronics. Moreover, its electrical properties like critical field (Ecrit) and saturation velocity (vsat) are superior as compared to the commercially abundant Silicon, thus making it a better alternative for RF and high power applications.

The in-house SiC BJT process at KTH has matured a lot over the years and recently developed devices and circuits have shown to work at temperatures exceeding 500˚C. However, the functional reliability of more complex circuits requires the use of simulators and device models to describe the behavior of constituent devices. SPICE Gummel Poon (SGP) is one such model that describes the behavior of the BJT devices. It is simpler as compared to the other models because of its relatively small number of parameters.

A simple semi-empirical DC compact model has been successfully developed for low voltage applications SiC BJTs. The model is based on a temperature dependent SiC-SGP model. Studies over the temperature dependences for the SGP parameters have been performed. The SGP parameters have been extracted and some have been optimized over a wide temperature range and they have been compared with the measured data. The accuracy of the developed compact model based on these parameters has been proven by comparing it with the measured data as well. A fairly accurate performance at the required working conditions and correlation with the measured results of the SiC compact model has been achieved.

Place, publisher, year, edition, pages
2016. , p. 55
Series
TRITA-ICT-EX ; 2016:89
Keywords [en]
silicon carbide, SiC, wide bandgap, bipolar junction transistor, BJT, SPICE modelling, Gummel Poon, compact modelling, transistor characterization, high temperature, integrated circutis
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-202754OAI: oai:DiVA.org:kth-202754DiVA, id: diva2:1078568
Subject / course
Electrical Engineering
Educational program
Degree of Master
Supervisors
Examiners
Available from: 2017-03-06 Created: 2017-03-06 Last updated: 2017-04-21Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • ieee
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  • de-DE
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More languages
Output format
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