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A Solution-Doped Polymer Semiconductor: Insulator Blend for Thermoelectrics
Chalmers, Dept Chem & Chem Engn, S-41296 Gothenburg, Sweden..
Chalmers, Dept Chem & Chem Engn, S-41296 Gothenburg, Sweden.;King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia.;King Abdullah Univ Sci & Technol KAUST, KAUST Solar Ctr KSC, Thuwal 239556900, Saudi Arabia..
Chalmers, Dept Phys, S-41296 Gothenburg, Sweden..
Esfera UAB, Inst Ciencia Mat Barcelona, S-08193 Bellaterra, Spain..
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2017 (English)In: ADVANCED SCIENCE, ISSN 2198-3844, Vol. 4, no 1, article id 1600203Article in journal (Refereed) Published
Abstract [en]

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer- thick films that feature a fine distribution of the F4TCNQ dopant: semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm(-1) and Seebeck coefficient from 100 to 60 mu V K-1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m(-1)K(-1) gives rise to a thermoelectric Figure of merit ZT similar to 10(-4) that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant: semiconductor: insulator ternary blends.

Place, publisher, year, edition, pages
2017. Vol. 4, no 1, article id 1600203
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Chemical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-315827DOI: 10.1002/advs.201600203ISI: 000392400200008PubMedID: 28105396OAI: oai:DiVA.org:uu-315827DiVA, id: diva2:1076003
Funder
Swedish Research Council FormasKnut and Alice Wallenberg FoundationSwedish Foundation for Strategic Research EU, European Research Council, 637624 648901Available from: 2017-02-21 Created: 2017-02-21 Last updated: 2017-02-21Bibliographically approved

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