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Low operational current spin Hall nano-oscillators based on NiFe/W bilayers
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0003-3605-8872
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
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2016 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 109, no 24, article id 242402Article in journal (Refereed) Published
Abstract [en]

We demonstrate highly efficient spin Hall nano-oscillators (SHNOs) based on NiFe/beta-W bilayers. Thanks to the very high spin Hall angle of beta-W, we achieve more than a 60% reduction in the auto-oscillation threshold current compared to NiFe/Pt bilayers. The structural, electrical, and magnetic properties of the bilayers, as well as the microwave signal generation properties of the SHNOs, have been studied in detail. Our results provide a promising path for the realization of low-current SHNO microwave devices with highly efficient spin-orbit torque from beta-W. Published by AIP Publishing.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2016. Vol. 109, no 24, article id 242402
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Physical Sciences
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URN: urn:nbn:se:kth:diva-201252DOI: 10.1063/1.4971828ISI: 000391457500025Scopus ID: 2-s2.0-85006791339OAI: oai:DiVA.org:kth-201252DiVA, id: diva2:1074400
Note

QC 20170215

Available from: 2017-02-15 Created: 2017-02-15 Last updated: 2017-11-29Bibliographically approved

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Mazraati, HamidChung, SunjaePiazza, LucaQejvanaj, FatjonJiang, ShengLe, Tuan Q.Weissenrieder, JonasÅkerman, Johan
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