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Design of Resonant Converters using Silicon Carbide Power
KTH, School of Electrical Engineering (EES).
2016 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

The design of series-loaded resonant converters using the state of the art SiC power transistorsis investigated in the thesis. SiC devices are chosen as they offer lower switching losses comparedto conventional Si based devices A very detailed study about the working and differentmodes of operation of the resonant converter is carried out. The thesis further explains how thehigh speed switching capabilities of the SiC devices remain untapped owing to the presence ofstray inductances in the switch-snubber layout. A comparison of all the commercially availableSiC devices are carried out to find the most suitable switch for the resonant converter. Thethesis also carries out a very detailed step by step design of the circuit and the PCB layout forthe resonant converter. Two different layouts are proposed and then compared for their strayinductance and power losses. Finally, based on the experiments the thesis validates the suitabilityof using discrete SiC power transistors in place of power modules.

Abstract [sv]

Utformningen av serie-belastade resonansomvandlare med hjälp av toppmoderna SiC högeffekttransistorernaundersöks i denna avhandlingen. SiC-enheter väljs eftersom de erbjuderlägre switch-förluster jämfört med konventionella Si-baserade enheter.En mycket detaljeradstudie om funktionen och de olika operationella tillstånden hos resonansomvandlare utförs.Avhandlingen förklarar vidare hur förmågan till högfrekvent switchning hos SiC-enheterförblir ofullständigt utnyttjad på grund av förekomsten av ströinduktanser i switch-snubberlayouten.En jämförelse av alla kommersiellt tillgängliga SiC-enheter genomförs för att hittaden mest lämpliga switchen för resonansomvandlaren. Avhandlingen utförs också en mycketdetaljerad steg-för-steg-utformning av resonansomvandlaren kretsschema och kretskortlayout.Två olika layouter föreslås och jämförs därefter utifrån deras ströinduktanser ocheffektförluster. Slutligen, baserat på experimentella resultat bekräftar avhandlingen.Lämpligheten att använda diskreta SiC-effekttransistorer istället för effektmoduler medintegrerade drivarsteg för styrelektroderna.

Place, publisher, year, edition, pages
2016.
Series
TRITA-EE, ISSN 1653-5146 ; 2016:178
Keywords [en]
Silicon carbide, SiC, resonant converters, discrete power transistors, snubber stray inductances, switch stray inductances, PCB design
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-201662OAI: oai:DiVA.org:kth-201662DiVA, id: diva2:1073707
Available from: 2017-02-13 Created: 2017-02-13 Last updated: 2017-02-13Bibliographically approved

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