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Through-Glass-Via Enabling Low Loss High-Linearity RF Components
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. (RF MEMS)ORCID iD: 0000-0002-8264-3231
KTH, School of Electrical Engineering (EES), Micro and Nanosystems. (RF MEMS)ORCID iD: 0000-0002-8514-6863
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2016 (English)Conference paper, Published paper (Refereed)
Abstract [en]

This paper reports on successful fabrication of metal through glass via (TGV) for low-loss high-linearity wafer-level 3D packages (WLP). The DC resistance was characterized to 28mOhm/TGV and the non-linearity of two sets of TGVs with a 1.1 mm long transmission line was better than 78 dBm (IP3).

Place, publisher, year, edition, pages
2016.
Keywords [en]
MEMS Manufacturing, WL packaging, Through Glass Vias (TGV), RF TGV
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-199961OAI: oai:DiVA.org:kth-199961DiVA, id: diva2:1067132
Conference
11th Micronano System Workshop 2016 (MSW 2016)
Funder
VINNOVA, 2014-05240
Note

QC 20170330

Available from: 2017-01-20 Created: 2017-01-20 Last updated: 2017-03-30Bibliographically approved

Open Access in DiVA

fulltext(318 kB)36 downloads
File information
File name FULLTEXT01.pdfFile size 318 kBChecksum SHA-512
02505bcefb5e49e09bc6f3b43860952f3fde7909a2dde6a806233061d2ca08e4b0ccc42f65075802227eb9b12b2f1c5d43951351d646ee3e1928446782b6409d
Type fulltextMimetype application/pdf

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http://www.delegia.com/app/attendee/default.asp?ProjectId=7438&PageId=44191

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Shah, UmerCampion, JamesOberhammer, Joachim
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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
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  • Other locale
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Output format
  • html
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