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Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect
University of Toulouse, France.
University of Montpellier, France.
University of Montpellier, France.
University of Montpellier, France.
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2016 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 117, no 23, article id 237702Article in journal (Refereed) Published
Abstract [en]

We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The v = 2 quantized plateau appears from fields B similar or equal to 5 T and persists up to B similar or equal to 80 T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1/B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.

Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2016. Vol. 117, no 23, article id 237702
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-133375DOI: 10.1103/PhysRevLett.117.237702ISI: 000389032600014PubMedID: 27982608OAI: oai:DiVA.org:liu-133375DiVA, id: diva2:1060093
Note

Funding Agencies|Agence national de la Recherche (ANR), Metrograph project [ANR-2011-NANO-004]; program of China Scholarships Council under the Grant CSC [201404490072]

Available from: 2016-12-27 Created: 2016-12-22 Last updated: 2017-11-29

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