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Measurement and Characterization of 28 nm FDSOI CMOS Test Circuits for an LTE Wireless Transceiver Front-End
Linköping University, Department of Electrical Engineering, Integrated Circuits and Systems.
2016 (English)Independent thesis Advanced level (degree of Master (Two Years)), 80 credits / 120 HE creditsStudent thesis
Abstract [en]

This master thesis was part of a project at the Acreo Swedish ICT AB to investigate the 28 nm FDSOI CMOS process technology for the LTE front-end application. The project has resulted in a chip that contains different test circuits such as power amplifier (PA), mixer, low noise amplifier (LNA), RF power switch, and a receiver front-end. This thesis presents the evaluation of the RF power switch. At first, a stand-alone six-stacked single pole single throw (SPST) RF power switch was designed according to Rascher, and then it was modified to single pole double throw (SPDT) RF power switch according to the requirements of the project. This report presents an overview of the FDSOI CMOS process, basic theory of the RF switch, and the evaluation techniques. The post-simulation results showed that with the proper substrate biasing and matching (50 Ω), the RF switch will provide 2.5 dB insertion loss (IL) up to 27 dBm input power and over 30 dB isolation with 30 dBm input power at 2 GHz.

Abstract [sv]

Detta examensarbete har varit en del av ett projekt på Acreo Swedish ICT AB för att undersöka 28 nm FDSOI CMOS teknik för LTE front-end tillämpningar. Projektet har resulterat i ett chip som innehåller olika testkretsar: effektförstärkare, mixer, RF-effektomkoppare, LNA, och en mottagarfront-end. Denna avhandling presenterar en utvärdering av RF-omkopplaren. En SPST RF-omkopplare med sex staplade transistor konstruerades enligt Rascher. Sedan modifierades konstruktionen till en SPDT-omkoppare i enlighet med kraven för projektet. Denna rapport presenterar en översikt över FDSOI CMOS-tekniken, grundläggande teori för en RF switch samt utvärderingsmetoder. Simuleringsresultaten visade att med rätt substratbiasering och matchning (50 Ω), så ger RF-omkopplaren 2,5 dB förlust (IL) på upp till 27 dBm ineffekt och över 30 dB isolering med 30 dBm ineffekt vid 2 GHz.

Place, publisher, year, edition, pages
2016. , 77 p.
Keyword [en]
FDSOI CMOS, Transceiver, RF Switch, LTE, and Wireless.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:liu:diva-132367ISRN: LiTH-ISY-EX--16/5000--SEOAI: diva2:1044064
External cooperation
Acreo Swedish ICT AB, Norrköping, Sweden.
Subject / course
Master's Programme in Wireless Networks and Electronics, 120 ECTS
2016-10-05, Nollstället, ISY, Linköping University., Linköping, 15:15 (English)
Available from: 2016-11-02 Created: 2016-11-01 Last updated: 2016-11-02Bibliographically approved

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