Molecular hydrogen traps within silicon
1998 (English)In: E-MRS Meeting, European Materials Research Society , 1998Conference paper (Refereed)
We present the results of rst principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi level position on the diffusion barrier of molecular hydrogen within silicon is also discussed.
Place, publisher, year, edition, pages
European Materials Research Society , 1998.
Research subject Scientific Computing
IdentifiersURN: urn:nbn:se:ltu:diva-35761Local ID: a6ab12e0-1300-11dd-ada4-000ea68e967bOAI: oai:DiVA.org:ltu-35761DiVA: diva2:1009015
E-MRS Meeting : 16/06/1998 - 19/06/1998
Godkänd; 1998; 20080425 (ysko)2016-09-302016-09-30Bibliographically approved