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The electronic properties of transition metal hydrogen complexes in silicon
University of Exeter.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.
University of Newcastle Upon Tyne.
1998 (English)In: E-MRS Meeting, European Materials Research Society , 1998Conference paper (Refereed)
Abstract [en]

The electrical levels of various combinations of transition metal-H defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap manifold of states due to the impurity. Passive defects are identified.

Place, publisher, year, edition, pages
European Materials Research Society , 1998.
Research subject
Scientific Computing
URN: urn:nbn:se:ltu:diva-35466Local ID: a01257a0-12ff-11dd-ada4-000ea68e967bOAI: diva2:1008719
E-MRS Meeting : 16/06/1998 - 19/06/1998
Godkänd; 1998; 20080425 (ysko)Available from: 2016-09-30 Created: 2016-09-30Bibliographically approved

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Öberg, Sven
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