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The electronic properties of transition metal hydrogen complexes in silicon
University of Exeter.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
University of Newcastle Upon Tyne.
1998 (English)In: E-MRS Meeting, European Materials Research Society , 1998Conference paper, Published paper (Refereed)
Abstract [en]

The electrical levels of various combinations of transition metal-H defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap manifold of states due to the impurity. Passive defects are identified.

Place, publisher, year, edition, pages
European Materials Research Society , 1998.
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-35466Local ID: a01257a0-12ff-11dd-ada4-000ea68e967bOAI: oai:DiVA.org:ltu-35466DiVA: diva2:1008719
Conference
E-MRS Meeting : 16/06/1998 - 19/06/1998
Note
Godkänd; 1998; 20080425 (ysko)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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