The electronic properties of transition metal hydrogen complexes in silicon
1998 (English)In: E-MRS Meeting, European Materials Research Society , 1998Conference paper (Refereed)
The electrical levels of various combinations of transition metal-H defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap manifold of states due to the impurity. Passive defects are identified.
Place, publisher, year, edition, pages
European Materials Research Society , 1998.
Research subject Scientific Computing
IdentifiersURN: urn:nbn:se:ltu:diva-35466Local ID: a01257a0-12ff-11dd-ada4-000ea68e967bOAI: oai:DiVA.org:ltu-35466DiVA: diva2:1008719
E-MRS Meeting : 16/06/1998 - 19/06/1998
Godkänd; 1998; 20080425 (ysko)2016-09-302016-09-30Bibliographically approved