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Proximity effects of `unused' output buffers on ESD performance [CMOS]
1991 (English)In: Reliability physics 1991: 29th annual proceedings, [1991 International Reliability Physics Symposium], Las Vegas, Nevada, April 9, 10, 11, 1991, New York: IEEE Communications Society, 1991, 327-330 p.Conference paper, Published paper (Refereed)
Abstract [en]

A unique failure mechanism, identified on an unused output buffer located near a used input protection device, occurs when excessive substrate current is generated during an electrostatic discharge (ESD) event. This new mechanism, the proximity effect, plays an important role when the n moat region of an input ESD circuit is within 20 μm of an unrelated n moat diffusion region contacted to the power supply, V cc. The operation of the most commonly used ESD input protection circuitry when stressed with respect to Vcc is reviewed. A laser cut experiment has verified that disconnecting the Vcc bus from the unused n moats eliminates this type of ESD failure. Device metal mask changes have confirmed these findings. This ESD failure mechanism, has been demonstrated on a variety of I/O buffer layouts, and a solution has been identified

Place, publisher, year, edition, pages
New York: IEEE Communications Society, 1991. 327-330 p.
National Category
Signal Processing
Research subject
Signal Processing
Identifiers
URN: urn:nbn:se:ltu:diva-32742DOI: 10.1109/RELPHY.1991.146038Local ID: 752dd160-a026-11db-8975-000ea68e967bISBN: 0-87942-680-2 (print)OAI: oai:DiVA.org:ltu-32742DiVA: diva2:1005976
Conference
International Reliability Physics Symposium : 09/04/1991 - 11/04/1991
Note
Upprättat; 1991; 20070109 (ysko)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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Leblanc, James

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