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Leakage Current Compensation for a 450 nW, High Temperature, Bandgap Temperature Sensor
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.ORCID iD: 0000-0002-8216-832X
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.
2015 (English)In: Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2015, Piscataway, NJ: IEEE Communications Society, 2015, 343-347 p., 7208540Conference paper, Published paper (Refereed)
Abstract [en]

The design of a 450 nW bandgap temperature sensor in the 0 to 175 °C range is presented. The design demonstrates a leakage current compensation technique that is useful for low-power designs where transistor performance is limited. The technique mitigates the effects of leakage in Brokaw bandgap references by limiting the amount of excess current that is entering the bases of the main bipolar pair due to leakage. Using this technique, Monte Carlo simulations show an improvement factor of 7.6 for the variation of the temperature sensitivity over the full temperature range. For the variation of the reference voltage, Monte Carlo simulations show an improvement factor of 2.3.Sensors built using this technique can be used to accurately monitor the temperature of power semiconductors since wireless temperature sensors become feasible with sufficiently low power consumption.

Abstract [en]

The design of a 450 nW bandgap temperature sensor in the 0 to 175 °C range is presented. The design demonstrates a leakage current compensation technique that is useful for low power designs where transistor performance is limited. The technique mitigates the effects of leakage in Brokaw bandgap references by limiting the amount of excess current that is entering the bases of the main bipolar pair due to leakage. Using this technique, Monte Carlo simulations show an improvement factor of 7.6 for the variation of the temperature sensitivity over the full temperature range. For the variation of the reference voltage, Monte Carlo simulations show an improvement factor of 2.3. Sensors built using this technique can be used to accurately monitor the temperature of power semiconductors since wireless direct-contact temperature sensors become feasible with sufficiently low power consumption.

Place, publisher, year, edition, pages
Piscataway, NJ: IEEE Communications Society, 2015. 343-347 p., 7208540
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Industrial Electronics
Identifiers
URN: urn:nbn:se:ltu:diva-28487DOI: 10.1109/MIXDES.2015.7208540Scopus ID: 84953744489Local ID: 24e0418c-cdb6-4a99-b49f-f70e44121e89ISBN: 978-83-63578-06-0 (electronic)OAI: oai:DiVA.org:ltu-28487DiVA: diva2:1001685
Conference
International Conference of Mixed Design of Integrated Circuits and Systems : 25/06/2015 - 27/06/2015
Note
Validerad; 2015; Nivå 1; 20150507 (joanil)Available from: 2016-09-30 Created: 2016-09-30 Last updated: 2017-11-25Bibliographically approved

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