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A Subthreshold, Low-Power, RHBD Reference Circuit, for Earth Observation and Communication Satellites
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2015 (English)In: Circuits and Systems (ISCAS), 2015 IEEE International Symposium on, 2015, 2245-2248 p.Conference paper, Published paper (Refereed)
Abstract [en]

A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4 mu W and exhibits a measured Temperature Drift of 15ppm/degrees C for a temperature range of 190 degrees C (-60 degrees C to 130 degrees C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18 mu m standard CMOS technology and occupies a silicon area of 0.039mm(2). The proposed voltage reference is suitable for high-precision and low-power space applications.

Place, publisher, year, edition, pages
2015. 2245-2248 p.
Series
IEEE International Symposium on Circuits and Systems, ISSN 0271-4302
National Category
Communication Systems
Identifiers
URN: urn:nbn:se:uu:diva-274408DOI: 10.1109/ISCAS.2015.7169129ISI: 000371471002145ISBN: 978-1-4799-8391-9 (print)OAI: oai:DiVA.org:uu-274408DiVA: diva2:896451
Conference
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 24-27 May 2015, Lisbon, Portugal
Available from: 2016-01-21 Created: 2016-01-21 Last updated: 2016-07-06Bibliographically approved

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Prokofiev, Alexander V.

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